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Magazine Name : Ieee Transactions On Electron Devices

Year : 1998 Volume number : 45 Issue: 02

Hot Electron Degradation Of The Dc And Rf Characteristics Of Algaas/Ingaas/Gaas Phemt'S (Article)
Subject: Feti , High-Speed Circuits , Millimeter Wave , Reliability
Author: Mattia Borgarino      Paolo Cova      Fausto Fantini     
page:      366 - 372
Multiple Negative-Differential-Resistance (Mndr)Phenomena Of A Metal-Insulator-Semiconductor-Insulator-Metal (Misim)-Like Structure With Step-Compositioned In Ga As Quantum Wells (Article)
Subject: Metal-Insulator-Semiconductor , Switching , Quantum Well
Author: Wen-Chau Liu      Shiou-Ying Cheng      Po-Hung Lin     
page:      373 - 379
Simulation Of Temperature Cycling Effects On Electromigration Behavior Under Pulsed Current Stress (Article)
Subject: Diffusion Processes , Electromigration , Integrated Technology
Author: J. W Haslett      X Gui     
page:      380 - 386
Scaling Theory Of Liquid-Crystal Displays Addressed By Thin-Film Transistors (Article)
Subject: Liquid-Crystal-On-Silicon (Lcos) , Thin-Film Transistors , Twisted-Nematic Amorphous Silicon
Author: T. K Tsukada     
page:      387 - 393
Numerical Examination Of Silicon Avalanche Photodiodes Operated In Charge Storage Mode (Article)
Subject: Avalanche Photodiodes , Numerical Simulation
Author: Joseph W. Parks      Kevin F. Brennan     
page:      394 - 400
Poly-Si/Poly-Sic Heterojunction Thin-Film Transistors (Article)
Subject: Poly-Phase System
Author: Kwangsoo Choi      Masakiyo Matsumura     
page:      401 - 405
Giant Isotope Effect In Hot Electron Degradation Of Metal Oxide Silicon Devices (Article)
Subject: Charge Carrier Processes , Cmos Integrated Circuit , Transistor Array
Author: K Hess      Lsik C. Kizilyalli      Joseph W. Lyding     
page:      406 - 416
A Compact Velocity-Overshoot Model For Deep-Submicron Bipolar Devices Considering Energy Transport (Article)
Subject: Bipolar Devices , Energy Transport , Velocity Overshoot
Author: Hung-Chih Wu      James B. Kuo     
page:      417 - 422
Improved Equivalent Circuit And Analytical Model For Amorphous Silicon Solar Cells And Modules (Article)
Subject: Amorphous Semiconductor , Outdoor Measurements , Product Degradation
Author: J. Merten      J. M. Asensi      A. V. Shah     
page:      423 - 429
Effect Of Floating-Body Charge On Soi Mosfet Design (Article)
Subject: Cmosfets , Silicon-On-Insulator (Soi)
Author: Andy Wei      Melanie J. Sherony      Dimitri A. Antoniadis     
page:      430 - 438
Three-Dimensional Base Distributed Effects Of Long Stripe Bjt'S Base Resistance Aat Dc (Article)
Subject: Base Resistance , Bipolar Transistor , Three-Dimensional
Author: Ming-Yeh Chuang      Mark E. Law     
page:      439 - 446
Amorphous Silicon Buried-Channel Thin-Film Transistors (Article)
Subject: Amorphous Semiconductor , Buried Channel , Flat Panel Displays
Author: Cory Weber      John R. Abelson     
page:      447 - 452
Verification Of Saturation Velocity Lowering In Mosfet'S Inversion Layer (Article)
Subject: Saturation , Inversion Layers
Author: Naoyuki Shigyo      Takeshi Shimane      Toshiyuki Enda     
page:      460 - 464
Thick-Layered Etched-Contact Amorphous Silicon Transistors (Article)
Subject: Thick-Section Steel Welds , Silicon Technology
Author: Serag M. Gadelrab      Savvas G. Chamberlain     
page:      465 - 471
A New Model For The Field Dependence Of Intrinsic And Extrinsic Time-Dependent Dielectric Breakdown (Article)
Subject:
Author: R. Degraeve      J. L. Ogier      G. Groeseneken     
page:      472 - 481
Stress-Induced Leakage Current Of Tunnel Oxide Derived From Flash Memory Read-Disturb Characteristics (Article)
Subject: Characteristic Speeds
Author: Shinji Satoh      David A Rozansky      Seiichi Aritome     
page:      482 - 486
A New 2-D Model For Operating Point Shift In Large Lwir Hgcdte Fpa' S (Article)
Subject: Cold Shield Shading , Focal Plain Array , Mercury Removal , Photovoltaic
Author: Vikram Dhar      R. K. Bhan      R. Ashokan     
page:      487 - 493
Evaluation Of The Valence Band Discontinuity Of Si/Si Heterostructures By Application Of Admittance Spectroscopy To Mos Capacitors (Article)
Subject: Admittance Matrix , Silicon , Valence Band
Author: Shin-Ichi Takagi      Jody L Hoyt      Kern Rim     
page:      494\ - 501
An Inimproved Technique And Experimental Results For The Extraction Of Electron And Hole Mobilities In Mos Accumulation Layers (Article)
Subject: Buried Channel , Electro And Hole Mobilities , Mos , Mos Amplifier
Author: G. L. Chindalore      J. B. Mckeon      S. Mudanai     
page:      502 - 511
Direct Lateral Profiling Of Hot-Carrier-Induced Oxide Charge And Interface Traps In Thin Gate Mosfet'S (Article)
Subject: Direct Lda
Author: Chun Chen      T.P Ma     
page:      512 - 520
Correlation Between Hot-Carrier-Induced Interface States And Gidl Current Increase In N-Mosfet'S (Article)
Subject:
Author: P. T. Lai      W. M. Wong      H. B. Lo     
page:      521 - 528
Influence Of Asymmetric/Symmetric Source /Drain Region On Asymmetry And Mismatch Of Cmosfet'S And Circuit Performance (Article)
Subject: Asymmetric , Circuit Principles , Cmosfets , Mosfet
Author: Takashi Ohzone      Tetsu Miyakawa      Toshiki Yabu     
page:      529 - 537
Room Temperature Photocurrent Spectroscopy Of Sige/Si Photodiodes Grown By Selective Epitaxy (Article)
Subject: Epitaxial Growth Floating-Body Effect , Heterojunctions , Photodiode On Soi
Author: Adrian Vonsovici      Lili Vescan      Alain Koster     
page:      538 - 542
Characteristics Of The Base Coupled Insulated Gate Thyristor Experiment And Analytical Modeling (Article)
Subject: Bipolar Devices , Device Physics , Power Semiconductor Devices
Author: J. S. Ajit     
page:      543 - 553
Numerical And Experimental Charcterization Of Single-And Double -Gate Race-Track-Shaped Field Emitter Structures (Article)
Subject: Displays , Electron Emission , Vacum Interrupter , Casting Mould.
Author: Baoling Wang      Johnny K. O. Sin      Jun Cai     
page:      554 - 559
Effects Of Nitrogen Implant Activation On The Sic/Sio Interface Of 6h-Sic Self Aligned Nmosfet'S (Article)
Subject: Mosfet , Silicon Carbide
Author: M. P. Lam      J. N. Pan      M. R. Mrlloch     
page:      565 - 566